[P-4-4] A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage

Sanghun Jeon、Changseok Kang、Ukjin Roh、Chang-Hyun Lee、Yoocheol Shin、Jaesung Sim、Juhyung Kim、Jongsun Sel、Younseok Jeong、Wonseok Jung、Jungdal Choi、Kinam Kim (1.Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.2006.P-4-4