[P-4-4] A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage

Sanghun Jeon, Changseok Kang, Ukjin Roh, Chang-Hyun Lee, Yoocheol Shin, Jaesung Sim, Juhyung Kim, Jongsun Sel, Younseok Jeong, Wonseok Jung, Jungdal Choi, Kinam Kim (1.Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.2006.P-4-4