[P-6-3] Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT

Hokyun Ahn, Jong-Won Lim, Hong-Gu Ji, Woo-Jin Chang, Jae-Kyoung Mun, Haecheon Kim (1.RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2006.P-6-3