[P-6-3] Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT

Hokyun Ahn、Jong-Won Lim、Hong-Gu Ji、Woo-Jin Chang、Jae-Kyoung Mun、Haecheon Kim (1.RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2006.P-6-3