[P-8-5] Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Taro Arakawa、Kazuhiro Takimoto、Shiro Miyazaki、Koichiro Yamaguchi、Nobuo Haneji、Joo-Hyong Noh、Kunio Tada (1.Graduate School of Engineering, Yokohama National University、2.Yokogawa Electric Corporation、3.Graduate School of Engineering, Kanazawa Institute of Technology)

https://doi.org/10.7567/SSDM.2006.P-8-5