[P-8-5] Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)

Taro Arakawa, Kazuhiro Takimoto, Shiro Miyazaki, Koichiro Yamaguchi, Nobuo Haneji, Joo-Hyong Noh, Kunio Tada (1.Graduate School of Engineering, Yokohama National University, 2.Yokogawa Electric Corporation, 3.Graduate School of Engineering, Kanazawa Institute of Technology)

https://doi.org/10.7567/SSDM.2006.P-8-5