Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications

G. L. Luo; Y. C. Hsieh; T. H. Yang; E. Y. Chang

doi:https://doi.org/10.7567/SSDM.2006.P-8-7

[P-8-7] Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications

G. L. Luo, Y. C. Hsieh, T. H. Yang, E. Y. Chang (1.National Nano Devices Laboratories, 2.Department of Materials Science and Engineering, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.P-8-7

2006 International Conference on Solid State Devices and Materials

[P-8-7] Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications