Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications

G. L. Luo; Y. C. Hsieh; T. H. Yang; E. Y. Chang

doi:https://doi.org/10.7567/SSDM.2006.P-8-7

2006 International Conference on Solid State Devices and Materials

2006年9月12日〜 2006年9月15日
PACIFICO Yokohama, Yokohama, Japan

[P-8-7] Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications

G. L. Luo、Y. C. Hsieh、T. H. Yang、E. Y. Chang (1.National Nano Devices Laboratories、2.Department of Materials Science and Engineering, National Chiao Tung University)

https://doi.org/10.7567/SSDM.2006.P-8-7

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