The Japan Society of Applied Physics

[A-1-3] Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method

N. Kitano, H. Arimura, S. Horie, T. Hosoi, T. Shimura, H. Watanabe, T. Kawahara, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda (1.Graduate School of Engineering, Osaka University, 2.Renesas Technology Corporation, 3.Canon ANELVA Corporation)