Fabrication of HfOxNy dielectrics on Ge from HfNx deposition

Tatsuro Maeda; Yukinori Morita; Shinichi Takagi

doi:https://doi.org/10.7567/SSDM.2007.A-2-4

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-4] Fabrication of HfOxNy dielectrics on Ge from HfNx deposition

Tatsuro Maeda、Yukinori Morita、Shinichi Takagi (1.MIRAI, Advanced Semiconductor Research Center - National Institute of Advanced Industrial Science and Technology (ASRC-AIST), AIST Tsukuba Central 4、2.The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.A-2-4

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