A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates

S. Zafar; Y. H. Kim; V. Paruchuri; V. Narayanan; B. Doris; A. Callegari; J. Stathis; T. Ning

doi:https://doi.org/10.7567/SSDM.2007.A-3-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-1] A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates

S. Zafar、Y. H. Kim、V. Paruchuri、V. Narayanan、B. Doris、A. Callegari、J. Stathis、T. Ning (1.IBM Semiconductor Research & Development Center (SRDC), Research Division)

https://doi.org/10.7567/SSDM.2007.A-3-1

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