[A-3-3] Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs

Takashi Onizawa、Motoyuki Sato、Takayuki Aoyama、Takahisa Eimori、Yasuo Nara、Yuzuru Ohji (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2007.A-3-3