[A-3-3] Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs

Takashi Onizawa, Motoyuki Sato, Takayuki Aoyama, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2007.A-3-3