[A-6-2] The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET

Minseok Jo、Hokyung Park、Man Chang、Hyung-Suk Jung、Jong-Ho Lee、Hyunsang Hwang (1.Gwangju Institute of Science and Technology、2.Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd., Korea.)

https://doi.org/10.7567/SSDM.2007.A-6-2