The Japan Society of Applied Physics

[A-8-1] Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique

Dai Ishikawa、Satoshi Kamiyama、Atsushi Sano、Sadayoshi Horii、Takayuki Aoyama、Yasuo Nara (1.Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.、2.Research Dept. 2, Semiconductor Equipment System Lab., Hitachi Kokusai Electric Inc.)

https://doi.org/10.7567/SSDM.2007.A-8-1