Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique

Dai Ishikawa; Satoshi Kamiyama; Atsushi Sano; Sadayoshi Horii; Takayuki Aoyama; Yasuo Nara

doi:https://doi.org/10.7567/SSDM.2007.A-8-1

[A-8-1] Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique

Dai Ishikawa、Satoshi Kamiyama、Atsushi Sano、Sadayoshi Horii、Takayuki Aoyama、Yasuo Nara (1.Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.、2.Research Dept. 2, Semiconductor Equipment System Lab., Hitachi Kokusai Electric Inc.)

https://doi.org/10.7567/SSDM.2007.A-8-1

2007 International Conference on Solid State Devices and Materials

[A-8-1] Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86 nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique