High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda; Noriyuki Taoka; Yoshimi Yamashita; Masatomi Harada; Kunihiro Suzuki; Toyoji Yamamoto; Naoharu Sugiyama; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2007.B-1-1

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-1] High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda, Noriyuki Taoka, Yoshimi Yamashita, Masatomi Harada, Kunihiro Suzuki, Toyoji Yamamoto, Naoharu Sugiyama, Shin-ichi Takagi (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.B-1-1

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