High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda; Noriyuki Taoka; Yoshimi Yamashita; Masatomi Harada; Kunihiro Suzuki; Toyoji Yamamoto; Naoharu Sugiyama; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2007.B-1-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-1] High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate

Keiji Ikeda、Noriyuki Taoka、Yoshimi Yamashita、Masatomi Harada、Kunihiro Suzuki、Toyoji Yamamoto、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI-ASET、2.MIRAI-ASRC、3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2007.B-1-1

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