Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

H. Zang; W. Y. Loh; J. D. Ye; T. H. Loh; G. Q. Lo; Byung Jin Cho

doi:https://doi.org/10.7567/SSDM.2007.B-1-2

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-2] Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

H. Zang, W. Y. Loh, J. D. Ye, T. H. Loh, G. Q. Lo, Byung Jin Cho (1.Silicon Nano Device Lab, Dept of ECE, National University of Singapore, 2.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.B-1-2

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