Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

H. Zang; W. Y. Loh; J. D. Ye; T. H. Loh; G. Q. Lo; Byung Jin Cho

doi:https://doi.org/10.7567/SSDM.2007.B-1-2

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-1-2] Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon

H. Zang、W. Y. Loh、J. D. Ye、T. H. Loh、G. Q. Lo、Byung Jin Cho (1.Silicon Nano Device Lab, Dept of ECE, National University of Singapore、2.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.B-1-2

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