[B-1-3] Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO2 Gate Dielectric

Jeong-Hyong Yi, Saeroonter Oh, H. -S. Philip Wong (1.Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University)

https://doi.org/10.7567/SSDM.2007.B-1-3