The Japan Society of Applied Physics

[B-1-5] Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs

Grace Huiqi Wang、Eng-Huat Toh、Keat-Mun Hoe、S. Tripathy、S. Balakumar、Guo-Qiang Lo、Ganesh Samudra、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore)

https://doi.org/10.7567/SSDM.2007.B-1-5