[B-5-3] Behavior of Low-Temperature Phonon-Limited Electron Mobility of Double-Gate Field-Effect Transistor with (111) Si Surface Channel

Tsuyoshi Yamamura、Shingo Sato、Yasuhisa Omura (1.Graduate School of Sci. & Eng, Kansai University)

https://doi.org/10.7567/SSDM.2007.B-5-3