A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device

In-Hwan Ji; Kyu-Heon Cho; Young-Hwan Choi; Soo-Seong Kim; Kwang-Hoon Oh; Chong-Man Yun; Min-Koo Han

doi:https://doi.org/10.7567/SSDM.2007.B-6-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-6-4] A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device

In-Hwan Ji, Kyu-Heon Cho, Young-Hwan Choi, Soo-Seong Kim, Kwang-Hoon Oh, Chong-Man Yun, Min-Koo Han (1.School of Electrical Eng., Seoul Nat’l Univ., 2.Fairchild Semiconductor Dodang-Dong)

https://doi.org/10.7567/SSDM.2007.B-6-4

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