[B-6-4] A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device

In-Hwan Ji、Kyu-Heon Cho、Young-Hwan Choi、Soo-Seong Kim、Kwang-Hoon Oh、Chong-Man Yun、Min-Koo Han (1.School of Electrical Eng., Seoul Nat’l Univ.、2.Fairchild Semiconductor Dodang-Dong)

https://doi.org/10.7567/SSDM.2007.B-6-4