[B-7-2] In-situ Doped Embedded-SiGe Source/Drain Technique for 32 nm-node pMOSFET

H. Okamoto, A. Hokazono, K. Adachi, N. Yasutake, H. Itokawa, S. Okamoto, M. Kondo, H. Tsujii, T. Ishida, N. Aoki, M. Fujiwara, S. Kawanaka, A. Azuma, Y. Toyoshima (1.Process & Manufacturing Engineering Center, 2.System LSI Division, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2007.B-7-2