Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process

Tomohiro Yamashita; Yukio Nishida; Takeshi Okagaki; Yoshihiro Miyagawa; Jiro Yugami; Hidekazu Oda; Yasuo Inoue; Kentaro Shibahara

doi:https://doi.org/10.7567/SSDM.2007.B-7-4

[B-7-4] Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process

Tomohiro Yamashita、Yukio Nishida、Takeshi Okagaki、Yoshihiro Miyagawa、Jiro Yugami、Hidekazu Oda、Yasuo Inoue、Kentaro Shibahara (1.Process Technology Development Div., Renesas Technology Corp.、2.Graduate School of Advanced Sciences of Matter, Hiroshima University、3.Research Center for Nanodevices and Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.2007.B-7-4

2007 International Conference on Solid State Devices and Materials

[B-7-4] Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process