[B-7-5] Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology

Tsung-Yang Liow、Rinus T. P. Lee、Kian-Ming Tan、Ming Zhu、Keat-Mun Hoe、Ganesh S. Samudra、N. Balasubramanian、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore (NUS)、2.Institute of Microelectronics (IME))

https://doi.org/10.7567/SSDM.2007.B-7-5