[B-7-5] Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology

Tsung-Yang Liow, Rinus T. P. Lee, Kian-Ming Tan, Ming Zhu, Keat-Mun Hoe, Ganesh S. Samudra, N. Balasubramanian, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical & Computer Engineering, National University of Singapore (NUS), 2.Institute of Microelectronics (IME))

https://doi.org/10.7567/SSDM.2007.B-7-5