Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

Hiroshi Inokawa; Akira Fujiwara; Katsuhiko Nishiguchi; Yukinori Ono

doi:https://doi.org/10.7567/SSDM.2007.B-8-1

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-8-1] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

Hiroshi Inokawa、Akira Fujiwara、Katsuhiko Nishiguchi、Yukinori Ono (1.Research Institute of Electronics, Shizuoka University、2.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2007.B-8-1

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