Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs

H. Tsujii; A. Hokazono; M. Fujiwara; S. Kawanaka; A. Azuma; N. Aoki; Y. Toyoshima

doi:https://doi.org/10.7567/SSDM.2007.B-8-2

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-8-2] Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs

H. Tsujii, A. Hokazono, M. Fujiwara, S. Kawanaka, A. Azuma, N. Aoki, Y. Toyoshima (1.Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2007.B-8-2

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