[B-9-1] Wide-Range Vth Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode

T. Ishigaki、R. Tsuchiya、Y. Morita、N. Sugii、S. Kimura、T. Iwamatsu、T. Ipposhi、Y. Inoue、T. Hiramoto (1.Central Research Laboratory, Hitachi, Ltd.、2.Renesas Technology Corp.、3.Institute of Industrial Science, Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2007.B-9-1