Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts

F. Andrieu; F. Allain; C. Buj-Dufournet; O. Faynot; F. Rochette; M. Casse; V. Delaye; F. Aussenac; L. Tosti; P. Maury; L. Vandroux; N. Daval; I. Cayrefourcq; S. Deleonibus

doi:https://doi.org/10.7567/SSDM.2007.B-9-2

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-9-2] Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts

F. Andrieu, F. Allain, C. Buj-Dufournet, O. Faynot, F. Rochette, M. Casse, V. Delaye, F. Aussenac, L. Tosti, P. Maury, L. Vandroux, N. Daval, I. Cayrefourcq, S. Deleonibus (1.CEA-LETI MINATEC, 2.SOITEC, Parc technologique des Fontaines)

https://doi.org/10.7567/SSDM.2007.B-9-2

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