The Japan Society of Applied Physics

[B-9-2] Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts

F. Andrieu、F. Allain、C. Buj-Dufournet、O. Faynot、F. Rochette、M. Casse、V. Delaye、F. Aussenac、L. Tosti、P. Maury、L. Vandroux、N. Daval、I. Cayrefourcq、S. Deleonibus (1.CEA-LETI MINATEC、2.SOITEC, Parc technologique des Fontaines)

https://doi.org/10.7567/SSDM.2007.B-9-2