[B-9-5] A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications

Eng-Huat Toh、Grace Huiqi Wang、Lap Chan、Dennis Sylvester、Chun-Huat Heng、Ganesh Samudra、Yee-Chia Yeo. (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS))

https://doi.org/10.7567/SSDM.2007.B-9-5