[C-1-2] Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects

Daisuke Yokoyama、Kentaro Ishimaru、Takayuki Iwasaki、Shintaro Sato、Takashi Hyakushima、Mizuhisa Nihei、Yuji Awano、Hiroshi Kawarada (1.Waseda Univ., School of Sci & Eng.、2.MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.))

https://doi.org/10.7567/SSDM.2007.C-1-2