[C-1-4] A Novel Contact-plug Process with Low Resistance Nucleation Layer Using B2H6-reduction W-ALD Method for 32nm CMOS Devices and Beyond

A. Yutani、K. Ichinose、K. Maekawa、K. Asai、M. Kojima (1.Process Technology Development Div., Renesas Technology Corporation)

https://doi.org/10.7567/SSDM.2007.C-1-4