Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses

Masako Kodera; Tadashi Iguchi; Norihiko Tsuchiya; Mizuki Tamura; Shigeru Kakinuma; Nobuyuki Naka; Shinsuke Kashiwagi

doi:https://doi.org/10.7567/SSDM.2007.C-10-2

[C-10-2] Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses

Masako Kodera、Tadashi Iguchi、Norihiko Tsuchiya、Mizuki Tamura、Shigeru Kakinuma、Nobuyuki Naka、Shinsuke Kashiwagi (1.Process and Manufacturing Engineering Center, Toshiba Semiconductor Company、2.Toshiba I. S. Corp.、3.Horiba, Ltd.)

https://doi.org/10.7567/SSDM.2007.C-10-2

2007 International Conference on Solid State Devices and Materials

[C-10-2] Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses