[F-10-3] Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors

Rinus Tek-Po Lee、Kian-Ming Tan、Andy Eu-Jin Lim、Tsung-Yang Liow、Xu-Chu Chen、Ming Zhu、Alvin Tian-Yi Koh、Keat Mun Hoe、Shue-Yin Chow、Guo-Qiang Lo、Ganesh S. Samudra、Dong-Zhi Chi、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore、2.Agency for Science Technology and Research, Institute of Materials Research and Engineering、3.Agency for Science Technology and Research, Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.F-10-3