A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar; K.M. Hoe; W. Tang; Y.L. Foo; S. Tripathy; C.H. Tung; G.Q. Lo; N. Balasubramanian; D.L. Kwong

doi:https://doi.org/10.7567/SSDM.2007.F-3-5

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-3-5] A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar, K.M. Hoe, W. Tang, Y.L. Foo, S. Tripathy, C.H. Tung, G.Q. Lo, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics, 2.Institute of Materials Research and Engineering)

https://doi.org/10.7567/SSDM.2007.F-3-5

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