The Japan Society of Applied Physics

[F-3-5] A Novel Approach to Fabricate ~120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar, K.M. Hoe, W. Tang, Y.L. Foo, S. Tripathy, C.H. Tung, G.Q. Lo, N. Balasubramanian, D.L. Kwong (1.Institute of Microelectronics, 2.Institute of Materials Research and Engineering)

https://doi.org/10.7567/SSDM.2007.F-3-5