A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar; K.M. Hoe; W. Tang; Y.L. Foo; S. Tripathy; C.H. Tung; G.Q. Lo; N. Balasubramanian; D.L. Kwong

doi:https://doi.org/10.7567/SSDM.2007.F-3-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-3-5] A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator

S. Balakumar、K.M. Hoe、W. Tang、Y.L. Foo、S. Tripathy、C.H. Tung、G.Q. Lo、N. Balasubramanian、D.L. Kwong (1.Institute of Microelectronics、2.Institute of Materials Research and Engineering)

https://doi.org/10.7567/SSDM.2007.F-3-5

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