Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation

Katsuhiro Kutsuki; Gaku Okamoto; Takuji Hosoi; Takayoshi Shimura; Kiyoshi Yasutake; Heiji Watanabe

doi:https://doi.org/10.7567/SSDM.2007.F-9-4

2007 International Conference on Solid State Devices and Materials

Sep 18, 2007 - Sep 21, 2007
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-9-4] Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (1.Graduate School of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.2007.F-9-4

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