[G-2-3] First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Yuji Abe, Toshiyuki Oishi, Yasunori Tokuda, Yoshinobu Aoyagi (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center, 2.RIKEN, Nanoscience Development and Support Team, 3.Tokyo Institute of Technology, Dept. of Electronics and Applied Physics)

https://doi.org/10.7567/SSDM.2007.G-2-3