[G-2-3] First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation

Takuma Nanjo、Misaichi Takeuchi、Muneyoshi Suita、Yuji Abe、Toshiyuki Oishi、Yasunori Tokuda、Yoshinobu Aoyagi (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center、2.RIKEN, Nanoscience Development and Support Team、3.Tokyo Institute of Technology, Dept. of Electronics and Applied Physics)

https://doi.org/10.7567/SSDM.2007.G-2-3