[G-6-5] Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
Kai-Chieh Chuang, Jenn-Gwo Hwu
(1.EE-Ⅱ, R446, Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University)
https://doi.org/10.7567/SSDM.2007.G-6-5