Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

Kai-Chieh Chuang; Jenn-Gwo Hwu

doi:https://doi.org/10.7567/SSDM.2007.G-6-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[G-6-5] Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

Kai-Chieh Chuang、Jenn-Gwo Hwu (1.EE-Ⅱ, R446, Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University)

https://doi.org/10.7567/SSDM.2007.G-6-5

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