The Japan Society of Applied Physics

[G-6-5] Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

Kai-Chieh Chuang、Jenn-Gwo Hwu (1.EE-Ⅱ, R446, Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University)

https://doi.org/10.7567/SSDM.2007.G-6-5