Growth of InAs Channel HEMT Structure on Si substrate and It&apos;s Possible Application for Low Power Logic

E. Y. Chang; H. Yamaguchi; Y.C. Lin; M. Ueki; Y. Hirayama; C.Y. Chang

doi:https://doi.org/10.7567/SSDM.2007.G-7-1

[G-7-1] Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic

E. Y. Chang、H. Yamaguchi、Y.C. Lin、M. Ueki、Y. Hirayama、C.Y. Chang (1.Department of Materials Science and Engineering, National Chiao Tung University、2.NTT Basic Research Laboratories, NTT Corporation、3.Department of Physics, Tohoku University、4.NTT Electronics Techno Corporation、5.SORST-JST)

https://doi.org/10.7567/SSDM.2007.G-7-1

2007 International Conference on Solid State Devices and Materials

[G-7-1] Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic