[G-7-2] N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

Hock-Chun Chin、Ming Zhu、Keat-Mun Hoe、Ganesh S. Samudra、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS)、2.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.G-7-2