The Japan Society of Applied Physics

[G-7-2] N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

Hock-Chun Chin, Ming Zhu, Keat-Mun Hoe, Ganesh S. Samudra, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS), 2.Institute of Microelectronics)

https://doi.org/10.7567/SSDM.2007.G-7-2